IRLR2908PBF Datasheet, PDF (4/12 Pages) International Rectifier – HEXFET® Power MOSFET

IRLR/U2908PbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
5.0
ID= 23A
4.0
3.0
VDS= 64V
VDS= 40V
VDS= 16V
2.0
1.0
0.0
0
5
10
15
20
25
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
10.00
TJ = 175°C
1.00
TJ = 25°C
0.10
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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