IRLML6402PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRLML6402PbF
1000
800
600
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
400
Coss
200
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10 _{ID = -3.7A}
8
V_DS =-10V
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
3
6
9
12
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150° C
1
T_J = 25° C
0.1
0.2
V_GS = 0 V
0.4
0.6
0.8
1.0
1.2
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C = 25°C
T_J = 150°C
Single Pulse
0.1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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