IRLML6302TRPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET® Power MOSFET

IRLML6302PbF
180
V _GS = 0V,
f = 1MHz
160
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C _gd
140
Ciss
120
Coss
100
80
Crss
60
40
20
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
1
T_J = 150°C
0.1
T_J = 25°C
0.01
0.4
V_GS = 0V _A
0.6
0.8
1.0
1.2
1.4
-V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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10
I _D = -0.61A
V_DS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0.0
1.0
2.0
3.0
4.0
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100µs
1
1ms
10ms
T_A = 25°C
T_J = 150°C
Single Pulse
0.1
1
10
-V_DS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area
4