IRLML5103 Datasheet, PDF (4/9 Pages) International Rectifier – Power MOSFET(Vdss=-30V, Rds(on)=0.60ohm)

IRLML5103
140
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
120
C_iss
C_rss = C_gd
C_oss = C_ds + C_gd
100
Coss
80
60
Crss
40
20
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
T_J = 150°C
1
T_J = 25°C
0.1
0.4
VGS = 0V _A
0.6
0.8
1.0
1.2
1.4
1.6
-V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
20
I _D = -0.60A
16
V_DS = -24V
V_DS = -15V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0.0
1.0
2.0
3.0
4.0
5.0
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100µs
1
1ms
T_A = 25°C
T_J = 150°C
Single Pulse
0.1
10ms
1
10
-V_DS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area