IRLML2803GPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRLML2803GPbF
160
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
140
C_rss = C_gd
C_oss = C_ds + C_gd
120
Ciss
100
Coss
80
60
40
Crss
20
0
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
T_J = 150°C
1
T_J = 25°C
0.1
0.4
V_GS = 0V _A
0.6
0.8
1.0
1.2
1.4
V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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20
I _D = 0.91A
16
V _DS = 24V
V _DS = 15V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0.0
1.0
2.0
3.0
4.0
5.0
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
10µs
100µs
1
1ms
T_A = 25°C
T_J = 150°C
Single Pulse
0.1
10ms
1
10
V_DS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area
4