IRLML0060TRPBF Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET Power MOSFET

IRLML0060TRPbF
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
14.0
ID= 2.7A
12.0
VDS= 48V
10.0
VDS= 30V
VDS= 12V
8.0
6.0
4.0
2.0
0.0
01234567
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
10
TJ = 150°C
1
TJ = 25°C
0.1
0.2
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1msec
1
10msec
0.1
TA = 25°C
Tj = 150°C
Single Pulse
0.01
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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