IRHQ57110 Datasheet, PDF (4/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL

IRHQ57110
Pre-Irradiation
100
^TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
1
5.0V
0.1
0.1
 20µs PULSE WIDTH
TJ = 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
^TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
5.0V
1
0.1
0.1
 20µs PULSE WIDTH
TJ = 150 °C
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
 T_J = 150^° C
10
 T_J = 25^° C
1
0.1
5.0
 V DS = 25V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
2.5 _{ID = 4.6A}
2.0
1.5
1.0
0.5
 ^VGS ^{= 12V}
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com