IRHNA9260 Datasheet, PDF (4/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

IRHNA9260, JANSR2N7426U
Pre-Irradiation
1000
^TOP
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
100
-5.0V
 20µs PULSE WIDTH
TJ = 25 °C
10
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
^TOP
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
100
-5.0V
 20µs PULSE WIDTH
TJ = 150°C
10
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
10
5.0
 V DS = -50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
-V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
2.5 _{ ID = -29A}
2.0
1.5
1.0
0.5
 ^VGS ^{= -12V}
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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