IRHNA597064 Datasheet, PDF (4/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

IRHNA597064
1000
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
100
-5.0V
Pre-Irradiation
1000
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
- 6.0V
BOTTOM -5.0V
100
-5.0V
10
0.1
20µs PULSE WIDTH
Tj = 25°C
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25°C
TJ = 150°C
100
5
VDS = -25V
20µs P1U5LSE WIDTH
5.5 6 6.5 7 7.5 8
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
2.0 _{ID = --5765A}
1.5
1.0
0.5
V_GS = -12V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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