IRG4PC60UPBF Datasheet, PDF (4/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

IRG4PC60UPbF
80
V _GE = 15V
70
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
3.0
VGE = 15V
80µs PULSE WIDTH
IC = 80A
2.0
IC = 40A
IC = 20A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P _DM
t₁
t₂
Notes:
1. Duty factor D =
t₁/ t ₂
2. Peak T _J = P _DM x Z _thJC + T _C
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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