IRG4PC30WPBF_15 Datasheet, PDF (4/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC30WPbF
25
V _GE = 15V
20
15
10
5
0
A
25
50
75
100
125
150
T_C , Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
3.0 _{VGE = 15V}
80 us PULSE WIDTH
2.5
2.0
I_C = 24 A
I_C = 12 A
I_C = 6 A
1.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( °C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
1. Duty factor D = t₁ / t₂
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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