IRG4BC20S Datasheet, PDF (4/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)

IRG4BC20S
20
15
 3.0
V_GE = 15V
80 us PULSE WIDTH
 I_C = 20 A
10
2.0
5
0
25
50
75
100
125
150
T_C , Case Temperature ( ° C)
 I_C = 10 A
 I_C = 5.50AA
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
1 ^0.50
0.20
0.10
0.05
0.1 _0.02
0.01
0.01
0.00001
 ^{SINGLE PULSE}
(THERMAL RESPONSE)
 PDM
t₁
t₂
 Notes:
1. Duty factor D = t₁ / t₂
2. Peak T_J = P_DM x Z _thJC + T_C
0.0001
0.001
0.01
0.1
1
t₁ , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com