IRG4BC15UD-SPBF Datasheet, PDF (4/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD

IRG4BC15UD-S/LPbF
14
12
10
8
6
4
2
0
25
50
75
100
125
150
T_C , Case Temperature ( °C)
4.0
VGE = 15V
80µs PULSE WIDTH
3.0
2.0
IC = 14A
IC = 7.8A
IC = 3.9A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140
TJ , Junction Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t₁
t2
Notes:
1. Duty factor D = t₁ / t₂
2. Peak T_J = P_DM x Z _thJC + T_C
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case