IRG4BC10SD Datasheet, PDF (4/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4BC10SD
16
12
3.00 _{VGE = 15V}
80 us PULSE WIDTH
2.50
I_C = 16 A
8
4
0
25
50
75
100
125
150
T_C , Case Temperature ( °C)
2.00
I_C = 8 A
1.50
I_C = 4 A
1.00
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.1
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P_DM
t1
t₂
Notes:
1. Duty factor D = t1 / t2
2. Peak T_J = P_DM x Z _thJC + T_C
0.0001
0.001
0.01
0.1
1
t₁ , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com