IRFZ46NPBF_15 Datasheet, PDF (4/8 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY

IRFZ46NPbF
3000
2500
2000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1500
1000
500
C_oss
C_rss
0
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 28A}
16
12
V_DS= 44V
V_DS= 27V
V_DS= 11V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60 70
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175° C
10
T_J = 25° C
1
0.1
0.2
V _GS = 0 V
0.7
1.2
1.7
2.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS (on)
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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