IRFZ44RPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFZ44RPbF
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
100us
1ms
10
10ms
T_C = 25 °C
T_J = 175 °C
Single Pulse
1
1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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