IRFZ44NPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET-R Power MOSFET

IRFZ44NPbF
2500
2000
1500
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1000
500
0
1
C_oss
C_rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 25A
16
12
V_DS = 44V
V_DS = 27V
V_DS = 11V
8
4
0
0 10 20 30 40 50 60 70
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175° C
10
1
T_J = 25° C
0.1
0.0
V_GS = 0 V
0.6
1.2
1.8
2.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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