IRFRU5305 Datasheet, PDF (4/10 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A)

IRFR/U5305
2500
V _GS = 0V,
f = 1MHz
C _iss = C_gs + C _gd , C_ds SH OR TE D
C _rss = C _gd
2000
C _oss = C _ds + C _gd
C iss
C oss
1500
1000
Crss
500
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I_D = -16A
16
V _DS = -44V
V _DS = -28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
10
20
30
40
50
60
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 17 5 °C
T_J = 25 °C
10
0.4
VGS = 0V _A
0.8
1.2
1.6
2.0
-V_SD , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
100
100µs
10
1m s
T_C = 25°C
T_J = 175°C
S ing le P u lse
1
1
10
10ms
A
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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