IRFR2405PBF Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET Power MOSFET

IRFR/U2405OPbF
4000
3200
2400
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1600
800
0
1
C_oss
C_rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 34A
16
12
V_DS = 44V
V_DS = 27V
V_DS = 11V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
100
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175° C
T_J = 25° C
10
V_GS = 0 V
1
0.4
0.8
1.2
1.6
2.0
2.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
100
100us
10
1ms
T_C = 25°C
T_J = 175°C
Single Pulse
1
1
10
10ms
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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