IRFPS38N60L Datasheet, PDF (4/9 Pages) International Rectifier – SMPS MOSFET

IRFPS38N60L
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
50
45
40
35
30
25
20
15
10
5
0
0
100 200 300 400 500 600 700
VDS, Drain-to-Source Voltage (V)
Fig 6. Typ. Output Capacitance
Stored Energy vs. V_DS
12.0
10.0
ID= 38A
8.0
VDS= 480V
VDS= 300V
VDS= 120V
6.0
1000.00
100.00
10.00
TJ = 150°C
4.0
2.0
0.0
0
50
100 150 200 250
QG Total Gate Charge (nC)
Fig 7. Typical Gate Charge vs.
Gate-to-Source Voltage
4
1.00
TJ = 25°C
VGS = 0V
0.10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode
Forward Voltage
www.irf.com