IRFPS3815 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A)

IRFPS3815
12000
10000
8000
6000
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
4000
2000
Crss
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 58A
16
12
V_DS = 120V
V_DS = 75V
V_DS = 30V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
100
200
300
400
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175° C
10
1
T_J = 25° C
0.1
0.0
V_GS = 0 V
0.4
0.8
1.2
1.6
2.0
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
1000
10us
100
100us
1ms
10
10ms
T_C = 25 °C
T_J = 175°C
Single Pulse
1
1
10
100
V_DS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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