IRFPS3810PBF_15 Datasheet, PDF (4/8 Pages) International Rectifier – Advanced Process Technology

IRFPS3810PbF
15000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
SHORTED
Ciss
5000
Coss
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 100A
16
V_DS = 80V
V_DS = 50V
V_DS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
100
200
300
400
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
T_J = 175° C
100
T_J = 25° C
10
0.2
V_GS = 0 V
0.8
1.4
2.0
2.6
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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