IRFP3415PBF_15 Datasheet, PDF (4/9 Pages) International Rectifier – Advanced Process Technology

IRFP3415PbF
6000
5000
4000
3000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
2000
1000
C_oss
C_rss
0
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 22A
16
V_DS = 120V
V_DS = 75V
V_DS = 30V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175 ^oC
10
T_J = 25 ^oC
1
0.1
0.2
V_GS = 0 V
0.6
1.0
1.4
1.8
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25^o C
T_J = 175^o C
Single Pulse
1
1
10
10ms
100
V_DS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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