IRFP250NPBF_15 Datasheet, PDF (4/8 Pages) International Rectifier – Advanced Process Technology

IRFP250NPbF
5000
4000
3000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
Coss
1000
Crss
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
16 _{ID = 18A}
12
V_DS= 160V
V_DS= 100V
V_DS= 40V
8
4
0
0
20
40
60
80
100
Q_G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
T_J = 175^°C
10
1
T_J = 25^°C
0.1
0.2
V _GS= 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD ,Source-to-Drain Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25 °C
T_J = 175 °C
Single Pulse
1
1
10
10ms
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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