IRFNG40 Datasheet, PDF (4/6 Pages) International Rectifier – POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=3.5ohm, Id=3.9A)

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IRFNG40 Device
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100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage
10
10us
100us
1
1ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
10
100
10ms
1000
10000
V_DS, Drain-to-Source Voltage (V)
Fig. 8 — Maximum Safe Operating Area
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 10a — Switching Time Test Circuit
Fig. 10b — Switching Time Waveforms
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