IRFIB41N15D Datasheet, PDF (4/12 Pages) International Rectifier – HEXFET Power MOSFET

IRFB/IRFIB/IRFS/IRFSL41N15D
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds
Crss = C _gd
Coss = Cds + Cgd
SHORTED
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 25A}
16
12
V_DS = 120V
V_DS = 75V
V_DS = 30V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80 100 120
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175° C
10
T_J = 25° C
1
0.1
0.2
V_GS = 0 V
0.6
1.0
1.4
1.8
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25°C
T_J = 175°C
Single Pulse
1
1
10
10ms
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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