IRFHM8330PBF_15 Datasheet, PDF (4/10 Pages) International Rectifier – Compatible with Existing Surface Mount Techniques

1000
100
TJ = 150°C
TJ = 25°C
10
VGS = 0V
1.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
60
Limited By Source
50
Bonding Technology 
40
30
20
10
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
10
IRFHM8330PbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10
Limited by package
1
10msec
DC
0.1 _{Tc = 25°C}
Tj = 150°C
Single Pulse
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2.6
2.4
2.2
2.0
1.8
1.6
ID = 25µA
1.4 ID = 250µA
1.2 ^{ID = 1.0mA}
ID = 1.0A
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Drain-to–Source Breakdown Voltage
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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June 30, 2014