IRFHM8228PBF Datasheet, PDF (4/9 Pages) International Rectifier – Control or synchronous MOSFET for synchronous buck converter

1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
0.0
VGS = 0V
0.4
0.8
1.2
1.6
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
70
60
Limited by source
bonding technology 
50
40
30
20
10
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
IRFHM8228PbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
Limited by source bonding
technology 
1
100µsec
1msec
0.1 _{Tc = 25°C}
Tj = 150°C
Single Pulse
0.01
0.1
1
10msec
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
3.0
2.5
2.0
1.5 ^{ID = 25µA}
ID = 250µA
ID = 1.0mA
1.0 ^{ID = 1.0A}
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Drain-to–Source Breakdown Voltage
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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August 23, 2013