IRFH7936PBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRFH7936PbF
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000 _Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
14.0
ID= 16A
12.0
10.0
VDS= 24V
VDS= 15V
8.0
6.0
4.0
2.0
0.0
0
5 10 15 20 25 30 35 40 45
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
10
DC
100µsec
1msec
10msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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