IRFBA22N50A Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)

IRFBA22N50A
7000
6000
5000
V _GS = 0V,
f = 1MHz
C _{is s} = C_gs + C_gd , C_ds SHOR TED
C_rss = C _gd
C_oss = C_ds + C _gd
4000
3000
2000
1000
0
1
C _iss
C oss
Crss
10
100
V_DS , D ra in-to -Source Volta ge (V)
A
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ ID = 23A}
16
 ^{VDS = 400V}
V_DS = 250V
V_DS = 100V
12
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80 100 120
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
 T_J = 150^° C
10
 T_J = 25^°C
 ^VGS ^{= 0 V}
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
 OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
 10us
 100us
10
 1ms
 ^{TC= 25°C}
T_J = 150 ° C
Single Pulse
1
10
100
 10ms
1000
V_DS , Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
www.irf.com