IRFB9N65A Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)

IRFB9N65A
2000
V _GS = 0V,
f = 1MHz
C _iss = C _gs + C _gd , C_ds S HO RTED
C _rss = C _gd
1600
C_oss = C_ds + C _gd
C _{is s}
1200
C oss
800
400
0
1
C rs s
10
100
V _DS , Drain-to-Source Voltage (V)
A
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 5.2A
16
12
V_DS = 450200VV
V_DS = 325V
V_DS = 130V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150° C
1
T_J = 25° C
0.1
0.2
V_GS = 0 V
0.4
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C = 25 °C
T_J = 150°C
Single Pulse
0.1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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