IRFB4127PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFETPower MOSFET

IRFB4127PbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
80
60
40
20
0
25
50
75
100 125 150 175
TC , CaseTemperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
8.0
6.0
4.0
2.0
0.0
0
40
80
120
160
200
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
100
1000
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
260
Id = 5mA
240
220
200
180
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1000
800
600
ID
TOP
8.2A
13A
BOTTOM 44A
400
200
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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