IRFB3006PBF_15 Datasheet, PDF (4/9 Pages) International Rectifier – Hard Switched and High Frequency Circuits

IRFB3006PbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
300
LIMITED BY PACKAGE
250
200
150
100
50
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
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10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
10
LIMITED BY PACKAGE
1msec
10msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
10
100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
80
ID = 5mA
75
70
65
60
55
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP 20A
27A
BOTTOM 170A
800
600
400
200
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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April 23, 2014