IRF9540NSTRLPBF Datasheet, PDF (4/11 Pages) International Rectifier – Advanced Process Technology

IRF9540NS/LPbF
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
20
ID= -14A
16
12
VDS= -80V
VDS= -50V
VDS= -20V
8
4
0
0
20 40 60 80 100 120
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
1
TJ = 25°C
0.1
0.4
VGS = 0V
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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