IRF9540NS Datasheet, PDF (4/10 Pages) International Rectifier – Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

IRF9540NS/L
3000
V _GS = 0V,
f = 1MHz
C _iss = C _gs + C _gd , C_ds S H O R TE D
2500
C _rss = C _gd
C _oss = C _ds + C _gd
2000
C iss
1500
C oss
1000
C rss
500
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I _D = -11A
16
12
V_DS = -80V
V_DS = -50V
V_DS = -20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
20
40
60
80
100
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10
T_J = 175°C
1
T_J = 25°C
0.1
0.2
VGS = 0V _A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-V_SD , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
100µs
10
1ms
T_C = 25°C
T_J = 175°C
Single Pulse
1
10m s
1
10
100
-V_DS , D rain-to-S ourc e V oltage (V )
A
1000
Fig 8. Maximum Safe Operating Area