IRF7YSZ44VCM Datasheet, PDF (4/7 Pages) International Rectifier – HEXFET® POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA

IRF7YSZ44VCM
3000
2500
2000
1500
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
500
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 20A
8
VDS= 48V
VDS= 30V
VDS= 12V
4
0
0 5 10 15 20 25 30 35 40
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
1.0
0.4
VGS = 0V
0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
1_0ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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