IRF7Y1405CM Datasheet, PDF (4/7 Pages) International Rectifier – HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)

IRF7Y1405CM
8000
6000
 VGS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
 C_iss
4000
2000
0
1
C _oss
C _rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ ID = 18A}
16
12
 ^{VDS = 44V}
V_DS = 27V
V_DS = 11V
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
60
120
180
240
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-to-Drain Voltage ( V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
100µs
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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