IRF7807ZTR Datasheet, PDF (4/10 Pages) International Rectifier – Control FET for Notebook Processor Power

IRF7807Z
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 8.8A
10
VDS= 24V
VDS= 15V
8
6
4
2
0
0
4
8
12
16
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
TJ = 150°C
10.0
1.0
TJ = 25°C
0.1
0.4
VGS = 0V
0.6
0.8
1.0
1.2
1.4
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1.0
10msec
10.0
100.0
VDS , Drain-toSource Voltage (V)
1000.0
Fig 8. Maximum Safe Operating Area
www.irf.com