IRF7750GPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET® Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET

IRF7750GPbF
2500
2000
1500
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1000
500
C_oss
C_rss
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10 _{ID = -4.7A}
8
V_DS =-16V
6
4
2
0
0
10
20
30
40
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1.00
0.80
0.60
ID = -250µA
0.40
0.20
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 7. Threshold Voltage Vs. Temperature
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
10
100us
1ms
1
10ms
T_A = 25°C
T_J = 150°C
Single Pulse
0.1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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