IRF7726 Datasheet, PDF (4/9 Pages) International Rectifier – Power MOSFET(Vdss=-30V)

IRF7726
3200
2800
2400
2000
 VGS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
 C_iss
1600
1200
800
400
0
1
C _oss
C _rss
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
16 _{ ID = -7.0A}
14
12
 ^{V DS= -24V}
V _DS= -15V
10
8
6
4
2
0
0
10
20
30
40
50
60
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
 T_J = 25^°C
10
 T_J = 150° C
1
0.1
0.0
 ^V GS ^{= 0 V}
1.5
3.0
4.5
6.0
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
 OPERATION IN THIS AREA LIMITED
BY R_DS(on)
 100us
10
 1ms
 ^{TC= 25 °C}
T_J = 150 °C
Single Pulse
1
0.1
1
 10ms
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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