IRF7606 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)

IRF7606
1000
800
V _GS = 0V ,
f = 1MH z
C _{is s} = C_gs + C _{g d} , C_ds SH OR TED
C _rss = C_{g d}
C _oss = C_ds + C _gd
C is s
600
C oss
400
Crs s
200
0
A
1
10
100
V _{D S} , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I _D = -2.7A
16
12
V_DS = -24V
V_DS = -15V
8
4
FOR TEST CIRCUIT
SEE F IGURE 9
0
A
0
5
10
15
20
25
30
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
10
T_J = 15 0°C
T_J = 25 °C
1
0.1
0.4
VG S = 0V _A
0.6
0.8
1.0
1.2
1.4
1.6
-V_SD , Source-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
10
1 00µs
1m s
T_A = 25°C
T_J = 150°C
S ing le Pulse
1
10 ms
1
10
-V_DS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area