IRF7603 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)

IRF7603
1000
800
C iss
V GS = 0V ,
f = 1MH z
C _{is s} = C_gs + C _{g d} , C_ds SH OR TED
C _rss = C_{g d}
C oss = Cds + C gd
600
C o ss
400
C rss
200
0
A
1
10
100
V _{D S} , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
T_J = 1 50 °C
T_J = 25 °C
1
0.1
0.4
VG S = 0V _A
0.8
1.2
1.6
2.0
2.4
V _SD , Source-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
20
ID = 3.7A
16
V _DS = 24V
V _DS = 15V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
4
8
12
16
20
24
28
Q _G , T otal G ate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN T HIS AREA LIMITE D
BY R DS(on)
10
100µ s
1m s
1
10 m s
T_A = 25°C
T_J = 150°C
S in gle Pu lse
0.1
0.1
1
10
V_DS , D rain-to-S ource Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area