IRF7530TR Datasheet, PDF (4/8 Pages) International Rectifier – Trench Technology

IRF7530
2000
1600
1200
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
800
400
0
1
C_oss
C_rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10 _{ID = 55..40A}
8
6
V_DS = 16V
V_DS = 10V
V_DS = 4V
4
2
0
0
5
10
15
20
25
30
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150° C
10
T_J = 25° C
V_GS = 0 V
1
0.5
1.0
1.5
2.0
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
10
100us
1ms
1
10ms
T_A = 25°C
T_J = 150° C
Single Pulse
0.1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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