IRF7526D1 Datasheet, PDF (4/8 Pages) International Rectifier – FETKY™ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)

IRF7526D1
Power Mosfet Characteristics
400
V _GS = 0V,
f = 1MHz
C _iss = C_gs + C _gd , C_ds SH OR TE D
C _rss = C _gd
C_oss = C_ds + C _gd
300
C _iss
C oss
200
C rss
100
20
I _D = -1 .2 A
16
12
8
4
V_DS = -24V
V_DS = -15V
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
T_J = 150°C
1
T_J = 25°C
0.1
0.4
VGS = 0V _A
0.6
0.8
1.0
1.2
1.4
-V_SD , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10
100µs
1
1m s
T_A = 25°C
T_J = 150°C
S ing le P u lse
0.1
1
10
10m s
A
100
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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