IRF7503TR Datasheet, PDF (4/8 Pages) International Rectifier – Generation V Technology

IRF7503
400
V_GS = 0V,
f = 1MHz
C _{is s} = C _gs + C _gd , C_ds SH O RTE D
C_rss = C _gd
C_{o ss} = C_ds + C _{g d}
300
C is s
C oss
200
100
C rs s
0
A
1
10
100
V _{D S} , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
T_J = 150 °C
T_J = 2 5°C
1
0.1
0.4
VGS = 0V _A
0.8
1.2
1.6
2.0
V _SD , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
20
I _D = 1.7A
16
V _DS = 24V
V _DS = 15V
12
8
4
FOR TES T CIRCUIT
SEE FIGURE 9
0
A
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
10
1 0µs
100µ s
1
1 ms
T_A = 25°C
T_J = 150°C
S ing le Pulse
0.1
1
10
10m s
A
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area