IRF7490 Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7490
100000
10000
1000
100
VGS
Ciss
Crss
Coss
= 0V, f = 1 MHZ
= Cgs + Cgd, Cds
= Cgd
= Cds + Cgd
SHORTED
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID= 3.2A
16
12
VDS= 80V
VDS= 50V
VDS= 20V
8
4
0
0 10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
10.0
TJ = 150°C
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1.0
TJ = 25°C
0.1
0.2
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
100µs ec
1
1ms ec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10ms ec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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