IRF7420 Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7420
5500
5000
4500
4000
3500
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
2500
2000
1500
Coss
1000 Crss
500
0
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
6 _{ ID = -11.5A}
5
 ^{V DS=-9.6V}
V _DS=-6V
4
3
2
1
0
0
10
20
30
40
50
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
 T_J = 150^° C
1
 T_J = 25°C
0.1
0.2
 ^V GS ^{= 0 V}
0.4
0.6
0.8
1.0
1.2
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
 OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
 100us
 1ms
10
 ^{TC = 25 °C}
T_J = 150 °C
Single Pulse
1
0.1
1
 10ms
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com