IRF7401 Datasheet, PDF (4/9 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)

IRF7401
3000
V _GS = 0V,
f = 1MHz
C _iss = C _gs + C _gd , C_ds S HO RTED
2500
C _rss = C _gd
C_oss = C_ds + C _gd
C _iss
2000
1500
C oss
1000
Crss
500
0
A
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
I_D = 4.1A
V_{D S} = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
0
10
20
30
40
50
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 25 °C
T_J = 15 0°C
10
1
0.1
0.0
VGS = 0V _A
1.0
2.0
3.0
4.0
V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100us
10
1ms
10ms
T_A = 25 °C
T_J = 150 ° C
Single Pulse
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area