IRF7341PBF Datasheet, PDF (4/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF7341PbF
2.5 _{ID = 4.7A}
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( ^°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
0.120
0.100
0.080
VGS = 4.5V
0.060
VGS = 10V
0.040
0
10
20
30
40
I _D , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
0.12
200
160
0.10
120
0.08
80
I _D = 4.7A
0.06
40
TOP
BOTTOM
ID
2.1A
3.8A
4.7A
0.04
0
A
2
4
6
8
10
V_GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com