IRF7307QPBF_10 Datasheet, PDF (4/10 Pages) International Rectifier – HEXFETPOWERMOSFET

IRF7307QPbF
100
N-Channel
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
T_J = 150°C
1
T_J = 25°C
0.1
V_GS = 0V _A
0.0
0.5
1.0
1.5
2.0
2.5
V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
T_C, Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
-V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 11a. Gate Charge Test Circuit
www.irf.com
100us
10
1ms
T_A = 25 °C
T_J = 150 °C
Single Pulse
1
0.1
1
10ms
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
V_DS
V_GS
R_G
R_D
D.U.T.
+
-
V_DD
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 10b. Switching Time Waveforms
4.5V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig 11b. Basic Gate Charge Waveform
4